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| 1035MP 35 Watts, 50 Volts Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1035 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55FW-1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC2 125 Watts Pk 65 Volts 3.5 Volts 2.5 Amps Pk - 65 to + 150oC + 200oC Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature ELECTRICAL CHARACTERISTICS @ 25C SYMBOL POUT PIN PG c VSWR CHARACTERISTICS Power Out Power Input Power Gain Efficiency Load Mismatch Tolerance TEST CONDITIONS F= 1025-1150 MHz Vcc = 50 Volts PW = 10 sec, DF = 1% F = 1090 MHz MIN 35 3.5 10 10.5 45 10:1 TYP MAX UNITS W W dB % FUNCTIONAL CHARACTERISTICS @ 25C BVebo Emitter to Base Breakdown Ie = 5 mA BVces Collector to Emitter Breakdown Ic = 15mA Hfe DC Current Gain Vce = 5V, Ic = 100 mA Cob Output Capacitance Vcb = 50 V, f = 1 MHz Thermal Resistance jc2 Note 1: At rated output power and pulse conditions 2: At rated pulse conditions Issue December 6, 1995 3.5 65 20 17 20 1.4 o V V pF C/W Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. 1035MP Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. |
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